for ZnSe movies with unique thickness is linear in the absorption edge, which confirmed immediate band gap transition. The film thickness dependence of optical band gap can be associated with a variety of things such as (i) crystal defects which create localized states Which might be change the helpful Fermi degree, (ii) crystallites dimensions whi
for ZnSe movies with various thickness is linear at the absorption edge, which verified immediate band gap changeover. The film thickness dependence of optical band gap may be connected with numerous variables for example (i) crystal defects which develop localized states Which may be change the successful Fermi stage, (ii) crystallites dimensions
for ZnSe movies with distinctive thickness is linear in the absorption edge, which confirmed immediate band gap transition. The film thickness dependence of optical band hole may be connected to many components for instance (i) crystal defects which make localized states That could be alter the powerful Fermi degree, (ii) crystallites dimension whi